When the popular direction oriented normal to the substrate is additional improved, the likelihood that a (111) face having a minimum floor energy faces with the (111) face at a wire cross part is decreased, in order that a slit-like disconnection due to the stressmigration decreased and the interconnection reliability could be improved. The current invention further relates to an electrode wire structure by which wire reliability is improved, a wire resistance and contact resistance is lowered, a heat radiation impact for wiring is improved, a stress for the semiconductor device is relaxed, and a wiring adhesion is improved. Accordingly, when the crystalline orientation of the wiring in every sample is changed, discount of the stress on the substrate was confirmed by measuring warp of the substrate. The stress migration is a phenomenon during which the transfer of Al atom is caused by a mechanical stress of different materials used for LSI.

Taking an instance of Al here, the electromigration is an phenomenon where an electron flowing the interconnection collides with an Al atom so that the Al atom is transferred. So as to resolve an issue of the low interconnection reliability, that a crystal orientation of Al interconnection is controlled has been examined. The same figures indicate that every of the crystal grain current within the movie interacts to each other, thus deteriorating the orientation thereof. Moreover, the additional most popular orientation of in Al can't utterly management an in-airplane orientation of crystal grain in a surface, so that the grown Al film becomes polycrystalline oriented in the preferred direction oriented regular to the substrate. The Al which grew to become a steady film accordingly is affected one another between neighboring crystal grains, so that the popular path oriented normal to the substrate is deteriorated. In different words, there's problem in the standard practice the place the popular course is deteriorated as a consequence of interaction between crystal grains below the conventional formation method. An Al crystal has a face centered cubic construction and an floor vitality thereof is minimum in a (111) face.

In FIG. 29, there may be formed a (111) Al surface in parallel to the base face and side face of the groove, there may be indicated a orientation in a lateral direction of the groove. With reference to FIG. 15C to indicate the peak for the Al movie which is formed on the thermal oxide film having the grooves thereon, the peak is further narrowed in comparison with the case the place there's formed no groove, so that forming the groove on the surface of the thermal oxide movie further improves the further most well-liked orientation characteristic. Based on still one other facet of the present invention, there is provided a way of producing a semiconductor device comprising the steps of: forming a groove having a predetermined pattern form on the floor of a substrate; forming a first metallic thin movie on the substrate; agglomerating the first steel movie by annealing in order to fill the primary metal into not less than a portion of the groove while formation of a local oxide film thereon is suppressed; forming a second metallic skinny movie made of a similar materials as the primary metal skinny movie, on the substrate with agglomerated first thin film; and patterning the first and second thin movies.

With reference to FIG. 9, Al may be filled into a groove having a contact gap or a by way of gap by agglomeration in a manner described in the first embodiment. Moreover, in order to enhance the step protection on the time of Al movie formation by sputtering, Aluminum single wire groove shapes resembling in FIG. 42A-42C could serve the aim and be implemented to the first by way of tenth embodiments. FIGS. 42A-42C show examples of groove shapes so as to improve the step protection. FIGS. 11A by way of 11E show cross sectional views for making a semiconductor machine in keeping with the third embodiment. FIGS. 24A and 24B present cross sectional views displaying that the steel thin movie is agglomerated after the metal skinny movie on the groove is selectively removed. FIG. Three exhibits relationship between thickness of Al movie and a temperature at which an Al filling within the groove is feasible. FIG. 37 reveals an analysis result on the reliability of the Al wiring whose width is 1.2 .mu.m and the bending portion in accordance with the ninth embodiment. FIG. 21 reveals a correlation between the contact angle of Al and C and the film thickness. Moreover, when the wiring metallic film situated outdoors the groove is all eliminated, the wiring steel movie may be agglomerated.